Multi-chamber apparatus

ABSTRACT

A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation application based on pending application Ser. No.16/690,498, filed Nov. 21, 2019, the entire contents of which is herebyincorporated by reference.

Korean Patent Application No. 10-2019-0048933, filed on Apr. 26, 2019,in the Korean Intellectual Property Office, and entitled: “Multi-ChamberEquipment,” is incorporated by reference herein in its entirety.

BACKGROUND 1. Field

Embodiments relate to a multi-chamber apparatus.

2. Description of the Related Art

As the NAND flash memory generation progresses, the number of tiers inwhich chips are stacked in a device may increase. With the increase inthe number of tiers and the reduction in design rules, some dryingprocesses performed using isopropyl alcohol while rotating a wafer maybe reaching the limit in terms of the occurrence of pattern leaning.Accordingly, supercritical drying may be performed using a supercriticalfluid.

In addition, a wafer cleaning process for removing silicon nitride of aNAND flash device may be performed in a batch type in which a wafer isimmersed in a bath. Some supercritical drying apparatuses may be of asingle type, rather than a batch type. An apparatus may perform a wafercleaning process and a supercritical drying process at once.

SUMMARY

The embodiments may be realized by providing a multi-chamber apparatusfor processing a wafer, the apparatus including a high etch rate chamberto receive the wafer and to etch silicon nitride with a phosphoric acidsolution; a rinse chamber to receive the wafer and to clean the waferwith an ammonia mixed solution; and a supercritical drying chamber todry the wafer with a supercritical fluid.

The embodiments may be realized by providing a multi-chamber apparatusfor processing a wafer, the apparatus including at least one high etchrate chamber to receive the wafer and to etch silicon nitride with achemical at a first temperature; at least one rinse chamber to receivethe wafer and to clean the wafer with a chemical at a second temperaturethat is lower than the first temperature; at least one supercriticaldrying chamber to dry the wafer with a supercritical fluid; a housing inwhich the at least one high etch rate chamber, the at least one rinsechamber, and the at least one supercritical drying chamber are located;and a robot arm in the housing to move the wafer to the at least onehigh etch rate chamber, the at least one rinse chamber, and the at leastone supercritical drying chamber.

The embodiments may be realized by providing a multi-chamber apparatusfor processing a wafer, the apparatus including at least one firstchamber; at least one second chamber; at least one third chamber; atransfer zone outside the at least one first chamber, the at least onesecond chamber, and the at least one third chamber; a buffer zoneoutside the at least one first chamber, the at least one second chamber,and the at least one third chamber and connected to the transfer zone;and a driver to move the wafer, wherein the driver moves the wafer fromthe buffer zone to the at least one first chamber, moves the wafer tothe at least one second chamber via the transfer zone after an etchingprocess is performed on the wafer using a phosphoric acid solution inthe at least one first chamber, moves the wafer to the at least onethird chamber via the transfer zone after a cleaning process isperformed on the wafer using an ammonia mixed solution in the at leastone second chamber, and moves the wafer to the buffer zone after asupercritical drying process is performed on the wafer in the at leastone third chamber.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will be apparent to those of skill in the art by describing indetail exemplary embodiments with reference to the attached drawings inwhich:

FIG. 1 illustrates a plan view of a multi-chamber apparatus according toembodiments;

FIG. 2 illustrates a side view of the multi-chamber apparatus of FIG. 1;

FIG. 3 illustrates a sequence of a wafer cleaning process performed bythe multi-chamber apparatus according to the embodiments;

FIG. 4 illustrates a cross-sectional view of a high etch rate chamber ofthe multi-chamber apparatus according to the embodiments;

FIG. 5 illustrates a flowchart of a process performed in the high etchrate chamber of the multi-chamber apparatus according to theembodiments;

FIG. 6 illustrates a cross-sectional view of a rinse chamber of themulti-chamber apparatus according to the embodiments;

FIG. 7 illustrates a flowchart of a process performed in the rinsechamber of the multi-chamber apparatus according to the embodiments;

FIG. 8 illustrates a cross-sectional view of a supercritical dryingchamber of the multi-chamber apparatus according to the embodiments;

FIG. 9 illustrates a flowchart of a process performed in thesupercritical drying chamber of the multi-chamber apparatus according tothe embodiments;

FIG. 10 illustrates a graph comparing a process time of each chamber ofa multi-chamber apparatus according to embodiments;

FIG. 11 illustrates a plan view of a multi-chamber apparatus accordingto embodiments;

FIG. 12 illustrates a side view of a multi-chamber apparatus accordingto embodiments; and

FIG. 13 illustrates a plan view of a multi-chamber apparatus accordingto embodiments.

DETAILED DESCRIPTION

A multi-chamber apparatus according to embodiments will now be describedwith reference to FIGS. 1 and 2 .

FIG. 1 illustrates a plan view of a multi-chamber apparatus according toembodiments. FIG. 2 illustrates a side view of the multi-chamberapparatus of FIG. 1 . Referring to FIGS. 1 and 2 , the multi-chamberapparatus according to the embodiments may include a housing 100, anopening and closing portion 105, a load port 110, a buffer zone 120, ahigh etch rate chamber 130, a rinse chamber 140, a supercritical dryingchamber 150, a transfer zone 160, and a driver 170. A first direction Xmay be any one of horizontal directions. A second direction Y may be anyone of horizontal directions different from the first direction X. Thesecond direction Y may intersect the first direction X. For example, thesecond direction Y may be perpendicular to the first direction X. Athird direction Z may be a direction intersecting the first direction Xand the second direction Y. For example, the third direction Z may be adirection perpendicular to both the first direction X and the seconddirection Y. The third direction Z may be, e.g., a vertical direction.Accordingly, the first direction X, the second direction Y, and thethird direction Z may be orthogonal to each other.

For example, the multi-chamber apparatus according to the embodimentsmay have a structure in which a plurality of chambers are stacked in thethird direction Z. In an implementation, as illustrated in FIGS. 1 and 2, the multi-chamber apparatus may include, e.g., twelve chambers. In themulti-chamber apparatus, six chambers arranged in plan view asillustrated in FIG. 1 may be stacked in two tiers. The multi-chamberapparatus of FIGS. 1 and 2 may include four high etch rate chambers 130,four rinse chambers 140, and four supercritical drying chambers 150. Forexample, FIG. 2 may be a side layout of the multi-chamber apparatuswhose chambers are stacked in two tiers in the third direction Z.

Referring to FIGS. 1 and 2 , the housing 100 may contain the high etchrate chamber 130, the rinse chamber 140, the supercritical dryingchamber 150, the buffer zone 120, the transfer zone 160, and the driver170. For example, the housing 100 may form outer walls of themulti-chamber apparatus according to the embodiments.

In an implementation, the housing 100 may have a rectangularparallelepiped shape, as illustrated in FIGS. 1 and 2 . In animplementation, the shape of the housing 100 may vary according to needsand purposes.

The opening and closing portion 105 may be at a side of the housing 100.The opening and closing portion 105 may be a passage through which awafer W is put into the housing 100 or removed from the housing 100(e.g., the wafer W may be insertable and/or removable through theopening and closing portion). The opening and closing portion 105 may beclosed to seal the housing 100. In an implementation, the opening andclosing portion 105 may be temporally opened when the wafer W is putinto the housing 100.

In an implementation, the apparatus may include, e.g., one, opening andclosing portion 105, as illustrated in FIGS. 1 and 2 .

The load port 110 may be outside the housing 100. The load port 110 maybe a place where a wafer W waits for a while (e.g., for a predeterminedtime) before being put into the housing 100. A plurality of wafers W maybe placed in the load port 110 before being put into the housing 100. Inan implementation, the wafers W may be placed in a stacked state.

The load port 110 may be provided in plural numbers. In animplementation, as illustrated in FIG. 1 , four load ports 110 may bepresent. In an implementation, a plurality of stacked wafers W may beplaced in each of the load ports 110.

The buffer zone 120 may be inside the housing 100. The buffer zone 120may be a place where a wafer W put into the housing 100 is first placed.The wafer W may be transferred from the load port 110 to the buffer zone120 by a second robot arm 172. The second robot arm 172 may move thewafer W in the first direction X, the second direction Y, and the thirddirection Z.

For example, the wafer W may be placed between the buffer zone 120 andthe transfer zone 160. This may facilitate transfer of the wafer W. Forexample, the buffer zone 120 may be connected to the transfer zone 160,and the wafer may be accommodatable in the buffer zone 120 for apredetermined time period before being moved to the high etch ratechamber 130, the rinse chamber 140, or the supercritical drying chamber150.

The high etch rate chamber 130 may be inside the housing 100. The highetch rate chamber 130 may receive the wafer W. The high etch ratechamber 130 may receive the wafer W through a first opening and closingportion 131 and maintain a sealed environment.

In an implementation, the high etch rate chamber 130 may, e.g., etchsilicon nitride (Si₃N₄) on the wafer W by using a phosphoric acid(H₃PO₄) solution. In an implementation, the temperature of thephosphoric acid solution may be, e.g., 150° C. to 300° C. In animplementation, the high etch rate chamber 130 may clean the wafer Wwith deionized water after the etching process using the phosphoric acidsolution.

The rinse chamber 140 may be inside the housing 100. The rinse chamber140 may receive the wafer W through a second opening and closing portion141 and maintain a sealed environment.

In an implementation rinse chamber 140 may, e.g., additionally removeparticles remaining on the wafer W by using a phosphoric acid solutionand clean the wafer W with an ammonia mixed solution. In animplementation, the ammonia mixed solution may contain, e.g.,NH₄OH:H₂O₂:H₂O. Next, the rinse chamber 140 may apply isopropyl alcohol(IPA) to the wafer W. Applying the isopropyl alcohol by the rinsechamber 140 may be a pretreatment process prior to a drying process ofthe supercritical drying chamber 150.

The supercritical drying chamber 150 may be inside the housing 100. Thesupercritical drying chamber 150 may receive the wafer W through a thirdopening and closing portion 151 and maintain a sealed environment.

The supercritical drying chamber 150 may dry the wafer W with asupercritical fluid. The supercritical drying chamber 150 may completelydry the wafer W in or from a wet state.

The transfer zone 160 may be adjacent to the outside of the high etchrate chamber 130, the rinse chamber 140, and the supercritical dryingchamber 150. The transfer zone 160 may be connected to the buffer zone120. The transfer zone 160 may be a passage through which the wafer W istransferred to the high etch rate chamber 130, the rinse chamber 140,the supercritical drying chamber 150, and the buffer zone 120. The waferW may be moved in the transfer zone 160 by a first robot arm 171. Thetransfer zone 160 may be a place where the first robot arm 171 isinstalled and moves.

Each of the high etch rate chamber 130, the rinse chamber 140 and thesupercritical drying chamber 150 may be provided in plural numbers. Inan implementation, the high etch rate chambers 130, the rinse chambers140 and the supercritical drying chambers 150 may be arranged in thefirst direction X and the second direction Y. In addition, the high etchrate chambers 130, the rinse chambers 140 and the supercritical dryingchambers 150 may be stacked in the third direction Z.

In an implementation, as illustrated in FIG. 1 , the high etch ratechambers 130, the rinse chambers 140 and the supercritical dryingchambers 150 may be arranged on both sides of the transfer zone 160 inthe second direction Y.

The driver 170 may move the wafer W. For example, the driver 170 maymove the wafer W to the load port 110, the buffer zone 120, the highetch rate chamber 130, the rinse chamber 140, and the supercriticaldrying chamber 150.

The driver 170 may include the first robot arm 171 and the second robotarm 172. In an implementation, as illustrated in FIG. 1 , the driver 170may include, e.g., two robot arms. In an implementation, the number ofrobot arms included in the driver 170 may vary.

In an implementation, the multi-chamber apparatus may also move thewafer W using a medium other than robot arms. For example, the driver170 may include other media such as a conveyor belt, that can move thewafer W.

The first robot arm 171 may move the wafer W. For example, the firstrobot arm 171 may move the wafer W from the buffer zone 120 to the highetch rate chamber 130. In an implementation, the first robot arm 171 maymove the wafer W from the supercritical drying chamber 150 to the bufferzone 120. The first robot arm 171 may be provided in plural numbers.

The first robot arm 171 may also move the wafer W from the high etchrate chamber 130 to the rinse chamber 140. In an implementation, thefirst robot arm 171 may move the wafer W from the rinse chamber 140 tothe supercritical chamber 150. The first robot arm 171 can move thewafer W in the first direction X, the second direction Y, and the thirddirection Z.

The second robot arm 172 may move the wafer W from the load port 110 tothe buffer zone 120. In an implementation, the second robot arm 172 maymove the wafer W from the buffer zone 120 to the load port 110. In animplementation, the second robot arm 172 may move the dried or dry waferW. The second robot arm 172 may also be provided in plural numbers.

The first robot arm 171 may include a plurality of holds or holders 171a through 171 c. In an implementation, as illustrated in FIG. 1 , thefirst robot arm 171 may include, e.g., three holders 171 a through 171c. In an implementation, the number of holders 171 a through 171 c mayvary.

In an implementation, the first robot arm 171 may include, e.g., a firstholder 171 a, a second holder 171 b, and a third holder 171 c. The firstholder 171 a may move the wafer W from the buffer zone 120 to the highetch rate chamber 130. The second holder 171 b may move the wafer W fromthe supercritical drying chamber 150 to the transfer zone 160 or thebuffer zone 120. The first holder 171 a and the second holder 171 b maymove the dry wafer W.

The third holder 171 c may move the wafer W from the high etch ratechamber 130 to the rinse chamber 140 via the transfer zone 160. Inaddition, the third holder 171 c may be used to move the wafer W fromthe rinse chamber 140 to the supercritical drying chamber 150 via thetransfer zone 160. In an implementation, the wafer W may be moved in awet state in order to prevent a pattern of the wafer W from leaning.

In an implementation, the first holder 171 a and the second holder 171 bmay be two separate holders. In an implementation, they can be used asone holder in the multi-chamber apparatus. For example, the two holdersmay be used to move a dry wafer W, and they can be used interchangeably.In an implementation, the third holder 171 c may not be usedinterchangeably with other holders.

By moving a dry wafer W and a wet wafer W using different holders asdescribed above, it is possible to help prevent the dry wafer W fromgetting wet again.

In an implementation, the third holder 171 c may be below the firstholder 171 a and the second holder 171 b (e.g., relative to the thirddirection Z) in order to prevent the dry wafer W from being contaminatedby the wet wafer W. For example, it is possible to prevent a liquiddripping from the wet wafer W from reaching the dry wafer W.

A process in which a wafer W passing through the opening and closingportion 105 moves to the high etch rate chamber 130 will now bedescribed. For ease of description, the two-tier multi-chamber apparatuswill be described as including a lower chamber area located in a lowertier of a two-tier structure and an upper chamber area located in anupper tier of the two-tier structure.

In an implementation, a wafer W moved from the load port 110 to thebuffer zone 120 by the second robot arm 172 may be in a height range ofthe lower chamber area in the third direction Z. The first robot arm 171may move to the height range of the lower chamber area in the thirddirection Z to receive the wafer W from the second robot arm 172 andthen may move the wafer W to the high etch rate chamber 130.

In an implementation, the wafer W moved from the load port 110 to thebuffer zone 120 by the second robot arm 172 may be located in a heightrange of the upper chamber area in the third direction Z. The firstrobot arm 171 may move to the height range of the upper chamber area inthe third direction Z to receive the wafer W from the second robot arm172 and then may move the wafer W to the high etch rate chamber 130.

In an implementation, the wafer W moved from the load port 110 to thebuffer zone 120 by the second robot arm 172 may be located at apredetermined height in the third direction Z.

In an implementation, the predetermined height may be a suitableposition, which may be allowed in the third direction Z, in the housing100.

In an implementation, the predetermined height may be within a heightrange of a chamber area where a high etch rate chamber 130 into whichthe wafer W can be put after a shortest waiting time among a pluralityof high etch rate chambers 130 is located. For example, thepredetermined height may be within the height range of the upper chamberarea or within the height range of the lower chamber area depending onthe progress of processes.

The first robot arm 171 may move to the predetermined height in thethird direction Z to receive the wafer W from the second robot 172 andthen may move the wafer W to the high etch rate chamber 130.

The sequence of a process performed using the multi-chamber apparatusaccording to the embodiments will now be described with reference toFIGS. 1 to 3 .

FIG. 3 illustrates the sequence of a wafer cleaning process performed bythe multi-chamber apparatus according to the embodiments.

Referring to FIGS. 1 through 3 , first, a wafer W may be located in theload port 110. The wafer W may be transferred to the buffer zone 120 bythe second robot arm 172. Here, the transfer of the wafer W from theload port 110 to the buffer zone 120 may be a dry transfer in which thewafer W is transferred in a dry state.

Next, the wafer W may wait in the buffer zone 120 and then betransferred to the high etch rate chamber 130. Here, the wafer W may betransferred by the first robot arm 171. The transfer of the wafer W fromthe buffer zone 120 to the high etch rate chamber 130 may be a drytransfer in which the wafer W is transferred in a dry state. The wafer Wmay be transferred to the high etch rate chamber 130 via the transferzone 160 or may be transferred directly from the buffer zone 120 to thehigh etch rate chamber 130. To transfer the wafer W directly from thebuffer zone 120 to the high etch rate chamber 130, the first opening andclosing portion 131 of the high etch rate chamber 130 may be formed oropen toward the buffer zone 120, or there may be a separate opening andclosing portion different from the first opening and closing portion 131formed or open toward the transfer zone 160. In an implementation, thewafer W may be moved by the first holder 171 a of the first robot arm171.

Next, the wafer W that has gone through a process in the high etch ratechamber 130 may be transferred to the transfer zone 160. Here, the waferW may be moved by the third holder 171 c of the first robot arm 171. Thetransfer of the wafer W from the high etch rate chamber 130 to thetransfer zone 160 may be a wet transfer in which the wafer W istransferred in a wet state.

Next, the wafer W may be transferred from the transfer zone 160 to therinse chamber 140. In an implementation, the wafer W may be continuouslymoved by the third holder 171 c of the first robot arm 171. The transferof the wafer W from the transfer zone 160 to the rinse chamber 140 maybe a wet transfer in which the wafer W is transferred in a wet state.

Next, the wafer W that has gone through a process in the rinse chamber140 may be transferred again to the transfer zone 160. Here, the wafer Wmay be moved by the third holder 171 c of the first robot arm 171. Thetransfer of the wafer W from the rinse chamber 140 to the transfer zone160 may be a wet transfer in which the wafer W is transferred in a wetstate.

Next, the wafer W may be transferred from the transfer zone 160 to thesupercritical drying chamber 150. Here, the wafer W may be continuouslymoved by the third holder 171 c of the first robot arm 171. The transferof the wafer W from the transfer zone 160 to the supercritical dryingchamber 150 may be a wet transfer in which the wafer W is transferred ina wet state.

Next, the wafer W that has gone through a process in the supercriticaldrying chamber 150 may be transferred again to the transfer zone 160.Here, the wafer W may be moved by the second holder 171 b of the firstrobot arm 171. The transfer of the wafer W from the supercritical dryingchamber 150 to the transfer zone 160 may be a dry transfer in which thewafer W is transferred in a dry state.

Next, the wafer W may be transferred from the transfer zone 160 to thebuffer zone 120. In an implementation, the wafer W may be continuouslymoved by the second holder 171 b of the first robot arm 171. Thetransfer of the wafer W from the transfer zone 160 to the buffer zone180 may be a dry transfer in which the wafer W is transferred in a drystate.

In an implementation, the wafer W may be transferred from the bufferzone 120 back to the load port 110 by the second robot arm 172.

As described above, a part for performing a wet transfer and a part forperforming a dry transfer may be strictly separated from each other inthe driver 170. For example, the third holder 171 c may be exclusivelyresponsible for a wet transfer, and the first holder 171 a, the secondholder 171 b and the second robot arm 172 may be responsible for a drytransfer. For example, it is possible to prevent a dried wafer W fromgetting wet again during a transfer.

A process performed on a wafer W in the high etch rate chamber 130 willnow be described with reference to FIGS. 4 and 5 .

FIG. 4 illustrates a cross-sectional view of the high etch rate chamber130 of the multi-chamber apparatus according to the embodiments. FIG. 5illustrates a flowchart of a process performed in the high etch ratechamber 130 of the multi-chamber apparatus according to the embodiments.

First, referring to FIG. 4 , the high etch rate chamber 130 may includea housing 1100 a, a spinner 1160 a, a nozzle 1170 a, a bowl 1180 a, anda fixing rotor module 1230 a.

A first direction X may be any one of horizontal directions. A seconddirection

Y may be any one of horizontal directions different from the firstdirection X. The second direction Y may intersect the first direction X.For example, the second direction Y may be perpendicular to the firstdirection X. A third direction Z may be a direction intersecting thefirst direction X and the second direction Y. For example, the thirddirection Z may be a direction perpendicular to both the first directionX and the second direction Y. The third direction Z may be, for example,a vertical direction. Accordingly, the first direction X, the seconddirection Y, and the third direction Z may be orthogonal to each other.

The housing 1100 a may be located under a wafer W. For example, thehousing 1100 a and the wafer W may be successively arranged in the thirddirection Z. The housing 1100 a may heat a lower surface of the wafer W.An upper surface of the housing 1100 a may be adjacent to the lowersurface of the wafer W.

The housing 1100 a may fix and support the wafer W. In addition, thehousing 1100 a may heat the wafer W.

The spinner 1160 a may include a grip portion 1161 a, a chemical drainguide 1163 a, a heat insulating block 1164 a, a first rotor portion 1165a, a sidewall portion 1168 a, a bearing 1166 a, and a fixing portion1167 a.

The grip portion 1161 a may be in contact with sides of the wafer W. Thegrip portion 116 a may be fixed to the wafer W by directly contactingthe sides of the wafer W. For example, the grip portion 1161 a mayrotate together with the wafer W.

The spinner 1160 a may rotate the wafer W at a suitable speed. This isbecause if the rotational speed of the spinner 1160 a were to be toohigh, an edge portion of the wafer W could relatively cooled, resultingin a non-uniform temperature distribution. In this case, an etch ratecould also be different in a central portion and the edge portion of thewafer W.

The grip portion 1161 a may include a heat insulating material. When thewafer W is heated by the housing 1100 a, the grip portion 116 a mayblock the transfer of heat, thereby preventing thermal damage to otherparts of the high etch rate chamber 130.

The chemical drain guide 1163 a may guide a drain path of a liquidchemical 1171 a. The chemical drain guide 1163 a may be connected to thegrip portion 1161 a. The liquid chemical 1171 a may be pushed to thesides of the wafer W by a flow Fa after being used in an etching processon an upper surface of the wafer W.

Then, the liquid chemical 1171 a may reach the chemical drain guide 1163a via the grip portion 1161 a on the sides of the wafer W and become adischarge liquid chemical 1171 oa. The discharge liquid chemical 1171 oamay be discharged to the outside along the chemical drain guide 1163 a.

The chemical drain guide 1163 a may be located at a position lower thanthe bowl 1180 a, and it may help prevent the liquid chemical 1171 a andthe discharge liquid chemical 1171 oa from leaking to the outside. Thiscan increase the durability of the high etch rate chamber 130 andprevent damage due to the discharge liquid chemical 1171 oa.

In addition, the chemical drain guide 1163 a may be further away fromthe wafer W than other elements of the spinner 1160 a, e.g., the heatinsulating block 1164 a, the first rotor portion 1165 a, the sidewallportion 1168 a, the bearing 1166 a, and the fixing portion 1167 a. Forexample, the discharge liquid chemical 1171 oa may be prevented fromdamaging the heat insulating block 1164 a, the first rotor portion 1165a, the sidewall portion 1168 a, the bearing 1166 a, and the fixingportion 1167 a.

The heat insulating block 1164 a may constitute sidewalls of the spinner1160 a between the grip portion 1161 a and the chemical drain guide 1163a. The heat insulating block 1164 a may be made of a heat insulatingmaterial to block the heat received by the grip portion 1161 a and thechemical drain guide 1163 a from being transmitted to other elements ofthe spinner 1160 a.

In an implementation, as illustrated in FIG. 4 , the heat insulatingblock 1164 a may be located at a position in direct contact with thegrip portion 1161 a and the chemical drain guide 1163 a. In animplementation, the heat insulating block 1164 a can be located at anyposition in the spinner 1160 a as needed.

In an implementation, as illustrated in FIG. 4 , the heat insulatingblock 1164 a may be a single element. In an implementation, the heatinsulating block 1164 a may also be disposed as a plurality of elementsin a plurality of parts.

The first rotor portion 1165 a may rotate the spinner 1160 a in amagnetic levitation manner, like a second rotor portion 1210 a to bedescribed below. The first rotor portion 1165 a may be fixed to the heatinsulating block 1164 a, the sidewall portion 1168 a, and the gripportion 1161 a of the spinner 1160 a, and the rotation of the firstrotor portion 1165 a may cause the entire spinner 1160 a to rotate. Forexample, the wafer W may also rotate together with the spinner 1160 a.Here, the housing 1100 a may rotate together with the spinner 1160 a, oronly the spinner 1160 a and the wafer W may rotate while the housing1100 a is fixed. If the housing 1100 a is fixed, the wafer W and thehousing 1100 a may be spaced apart from each other.

The first rotor portion 1165 a may include a magnetic substance. Thefirst rotor portion 1165 a may generate a rotational force through amagnetic force, together with the second rotor portion 1210 a which alsoincludes a magnetic substance.

The sidewall portion 1168 a may be in contact with the first rotorportion 1165 a to form the sidewalls of the spinner 1160 a. In animplementation, as illustrated in FIG. 4 , the sidewall portion 1168 amay be located between the first rotor portion 1165 a and the bearing1166 a. In an implementation, the sidewall portion 1168 a may alsoinclude all portions constituting the sidewalls of the spinner 1160 a.For example, the sidewall portion 1168 a may be a single element asillustrated in FIG. 4 or may include a plurality of elements.

In an implementation, the bearing 1166 a may be between the sidewallportion 1168 a and the fixing portion 1167 a. In an implementation, thebearing 1166 a may be at any position between the fixing portion 1167 athat is fixed and the first rotor portion 1165 a that is rotated.

The bearing 1166 a allows the spinner 1160 a to rotate. For example, thebearing 1166 a may be a minimum element for enabling the spinner 1160 ato rotate even though the spinner 1160 a includes the fixed fixingportion 1167 a.

The bearing 1166 a may rotate as the first rotor portion 1165 a rotates.The bearing 1166 a may simultaneously connect the fixing portion 1167 aand the sidewall portion 1168 a, the first rotor portion 1165 a, theheat insulating block 1164 a, the grip portion 1161 a, and the chemicaldrain guide 1163 a. Accordingly, the spinner 1160 a may be rotated whilebeing fixed.

The fixing portion 1167 a may be in a lower part of the spinner 1160 ato fix and support the spinner 1160 a. The fixing portion 1167 a may notrotate. Instead, the fixing portion 1167 a may be connected to thebearing 1166 a so as to allow a portion of the spinner 1160 a to rotate.

Accordingly, some portions of the spinner 1160 a excluding the fixingportion 1167 a may rotate, thereby rotating the wafer W.

The nozzle 1170 a may be located above the wafer W and the spinner 1160a. The nozzle 1170 a may supply the liquid chemical 1171 a to the uppersurface of the wafer W. The nozzle 1170 a may drop the liquid chemical1171 a onto the central portion of the wafer W. The wafer W may berotated to spread the dropped liquid chemical 1171 a over the entireupper surface of the wafer W. The high etch rate chamber 130 may applythe flow Fa downward (e.g., in the third direction Z) in order to spreadthe liquid chemical 1171 a on the fixed wafer W. Accordingly, the liquidchemical 1171 a may be moved from the center of the upper surface of thewafer W to the periphery.

In an implementation, as illustrated in FIG. 4 , the nozzle 1170 a mayspray the liquid chemical 1171 a downward above the upper surface of thewafer W. In an implementation, the nozzle 1170 a may also be located ona side of the wafer W at a position higher than the upper surface of thewafer W. The nozzle 1170 a may eject the liquid chemical 1171 a in alateral direction to supply the liquid chemical 1171 a to the uppersurface of the wafer W.

The liquid chemical 1171 a may be supplied by the nozzle 1170 a. Thenozzle 1170 a may eject the liquid chemical 1171 a to the upper surfaceof the wafer W at an appropriate amount and speed. This is because ifthe liquid chemical 1171 a were to be provided too much or too fast, atemperature rise of the wafer W may be delayed that much longer. Thebowl 1180 a may be located outside the wafer W, the spinner 1160 a, andthe housing 1100 a. The bowl 1180 a may extend in the third direction Zto a height higher than the upper surface of the wafer W. The bowl 1180a may block the outflow of the liquid chemical 1171 a and fumes producedby vaporization of the liquid chemical 1171 a. The bowl 1180 a may helpprevent other parts of the high etch rate chamber 130 from being damagedby the liquid chemical 1171 a and the fumes.

The fixing rotor module 1230 a may be spaced apart from the spinner 1160a. The fixing rotor module 1230 a may surround the spinner 1160 a. In animplementation, the fixing rotor module 1230 a may be located betweenthe chemical drain guide 1163 a and the first rotor portion 1165 a.

The fixing rotor module 1230 a may include the second rotor portion 1210a and a rotor support portion 1220 a. The second rotor portion 1210 amay rotate the spinner 1160 a in a magnetic levitation manner, like thefirst rotor portion 1165 a described above. The second rotor portion1210 a may be spaced apart from the heat insulating block 1164 a, thesidewall portion 1168 a, and the grip portion 1161 a of the spinner 1160a. In addition, the second rotor portion 1210 a is connected to therotor support portion 1220 a.

The second rotor portion 1210 a may include a magnetic substance. Thesecond rotor portion 1210 a may generate a rotational force through amagnetic force, together with the first rotor portion 1165 a.

The above configuration of the high etch rate chamber 130 is an example,and may be modified.

Referring to FIGS. 4 and 5 , the high etch rate chamber 130 etchessilicon nitride of a wafer with a phosphoric acid solution (operationS100).

For example, the silicon nitride may be a sacrificial layer or an etchstop layer in a semiconductor manufacturing process. The silicon nitridemay be etched by the phosphoric acid solution.

The high etch rate chamber 130 may remove most of the silicon nitride,and a cleaning process may be performed at a high temperature. Forexample, the phosphoric acid solution may be supplied at a hightemperature of 150° C. to 300° C.

Referring to FIG. 4 , the liquid chemical 1171 a supplied by the nozzle1170 a may be the phosphoric acid solution.

Next, referring again to FIG. 5 , the wafer may be cleaned withdeionized wafer (operation S200).

For example, referring to FIG. 4 , when most of the silicon nitride ofthe wafer W is etched by the phosphoric acid solution, the high etchrate chamber 130 may clean the wafer W by supplying deionized water tothe wafer W. Accordingly, when the wafer W is taken out of the high etchrate chamber 130, it may be in a wet state.

A process performed on a wafer W in the rinse chamber 140 will now bedescribed with reference to FIGS. 6 and 7 .

FIG. 6 illustrates a cross-sectional view of the rinse chamber 140 ofthe multi-chamber apparatus according to the embodiments. FIG. 7illustrates a flowchart of a process performed in the rinse chamber 140of the multi-chamber apparatus according to the embodiments.

First, referring to FIG. 6 , the rinse chamber 140 may include a housing1100 b, a spinner 1160 b, a nozzle 1170 b, a bowl 1180 b, and a fixingrotor module 1230 b. In an implementation, the housing 1100 b, thespinner 1160 b, the nozzle 1170 b, the bowl 1180 b and the fixing rotormodule 1230 b of FIG. 6 may have the same or similar structure as thehousing 1100 a, the spinner 1160 a, the nozzle 1170 a, the bowl 1180 aand the fixing rotor module 1230 a of FIG. 4 , respectively.

In the rinse chamber 140, a flow Fb may be applied to an upper surfaceof a wafer W, and a liquid chemical 1171 b may be supplied from thenozzle 1170 b. The liquid chemical 1171 b may become a discharge liquidchemical 1171 ob discharged along a chemical drain 1163 a.

The spinner 1160 b may include a grip portion 1161 b, the chemical drainguide 1163 b, a heat insulating block 1164 b, a first rotor portion 1165b, a sidewall portion 1168 b, a bearing 1166 b, and a fixing portion1167 b. The function of the spinner 1160 b is the same as that of thespinner 1160 a of FIG. 4 and thus will not be described for the sake ofconvenience.

The structure of the rinse chamber 140 illustrated in FIG. 6 is anexample, and may be modified.

Referring to FIGS. 6 and 7 , the rinse chamber 140 may remove particlesof a wafer with a phosphoric acid solution (operation S300).

For example, referring to FIG. 6 , silicon nitride of the wafer W mayremain on the wafer W without being completely etched in the high etchrate chamber 130, or particles of other materials may remain on thewafer W. Accordingly, the rinse chamber 140 may supply a phosphoric acidsolution again through the nozzle 1170 b as the liquid chemical 1171 bin order to remove these particles.

Next, referring again to FIG. 7 , the wafer may be cleaned with anammonia mixed solution (operation S400).

For example, referring to FIG. 6 , after etching the silicon nitride ofthe wafer W once more with the phosphoric acid solution, the rinsechamber 140 may clean the wafer W by supplying an ammonia mixed solutionto the wafer W. In an implementation, the ammonia mixed solution mayinclude, e.g., NH₄OH:H₂O₂:H₂O.

The temperature of the ammonia mixed solution may be, e.g., higher thanor equal to ambient (room) temperature (e.g., about 20° C.) or may be150° C. or below. For example, the rinse chamber 140 may perform aprocess at a lower temperature than the high etch rate chamber 130.

Next, referring again to FIG. 7 , isopropyl alcohol may be applied tothe wafer (operation S500).

For example, referring to FIG. 6 , the rinse chamber 140 may applyisopropyl alcohol to the wafer W through the nozzle 1170 b forpretreatment prior to a supercritical drying process. In animplementation, a new nozzle different from the existing nozzle 1170 bmay be used to prevent chemicals from being mixed with each other.

For example, when the wafer W is taken out of the rinse chamber 140, thewafer W may be in the wet state.

A process performed on a wafer W in the supercritical drying chamber 150will now be described with reference to FIGS. 8 and 9 .

FIG. 8 illustrates a cross-sectional view of the supercritical dryingchamber 150 of the multi-chamber apparatus according to the embodiments.FIG. 9 illustrates a flowchart of a process performed in thesupercritical drying chamber 150 of the multi-chamber apparatusaccording to the embodiments.

First, referring to FIG. 8 , the supercritical drying chamber 150 mayinclude the third opening and closing portion 151, a support 2100, afluid inlet 2200, a first valve 2210, a fluid outlet 2300, and a secondvalve 2310.

The third opening and closing portion 151 may be a passage through whicha wafer W is put into the supercritical drying chamber 150. The thirdopening and closing portion 151 may normally be closed to keep thesupercritical drying chamber 150 sealed. When the wafer W is put into orremoved from the supercritical drying chamber 150, the third opening andclosing portion 151 may be temporally opened to allow the wafer W topass through it.

The support 2100 may support the wafer W. The wafer W may be dried whilebeing fixed by the support 2100. In an implementation, the support 2100may minimize a contact surface with the wafer W.

The fluid inlet 2200 may supply a supercritical fluid into thesupercritical drying chamber 150. A supercritical fluid flow Fs mayreach the wafer W inside the supercritical drying chamber 150 throughthe fluid inlet 2200.

The first valve 2210 may control the opening and closing of the fluidinlet 2200. For example, the first valve 2210 may be opened when thesupercritical fluid is supplied and may be closed when the supply of thesupercritical fluid ends.

The fluid outlet 2300 may allow the supercritical fluid to be dischargedfrom the supercritical drying chamber 150 to the outside. Asupercritical fluid discharge Fo may be achieved through the fluidoutlet 2300.

The second valve 2310 may control the opening and closing of the fluidoutlet 2300. For example, the second valve 2310 may be opened when thesupercritical fluid is discharged and may be closed when the dischargeof the supercritical fluid ends.

Referring to FIG. 9 , the supercritical drying chamber 150 may dry awafer by supplying a supercritical fluid (operation S600).

For example, referring to FIG. 8 , the first valve 2210 may be opened toallow the supercritical fluid flow Fs to be applied to the wafer Winside the supercritical drying chamber 150 through the fluid inlet2200. Accordingly, the wafer W wet with isopropyl alcohol may be dried.

Next, referring again to FIG. 9 , the supercritical fluid may bedischarged (operation S700).

For example, referring to FIG. 8 , the second valve 2310 may be openedto allow the supercritical fluid discharge Fo to flow out of thesupercritical drying chamber 150 through the fluid outlet 2300.

A multi-chamber apparatus according to embodiments will now be describedwith reference to FIGS. 2, 10, and 11 . A repeated description ofelements and features identical to those of the above-describedembodiments may be omitted or given briefly.

FIG. 10 illustrates a graph comparing a process time of each chamber ofa multi-chamber apparatus according to embodiments. FIG. 11 illustratesa plan view of a multi-chamber apparatus according to embodiments.

Referring to FIG. 10 , a process in a high etch rate chamber 130 may beperformed for a first time t1, a process in a rinse chamber 140 may beperformed for a second time t2, and a process in a supercritical dryingchamber 150 may be performed for a third time t3.

In an implementation, the first time t1 may be longer than the secondtime t2 and the third time t3. In an implementation, the third time t3may be longer than the second time t2 but shorter than the first timet1. For example, the process performed in the high etch rate chamber 130may be the longest, and the process performed in the rinse chamber 140may be the shortest. In an implementation, a ratio of the first time t1,the second time t2 and the third time t3 may be, e.g., 5:1:3.

In an implementation, the ratio of the number of the high etch ratechambers 130, the number of the rinse chambers 140, and the number ofthe supercritical drying chambers 150 may be changed to a more efficientratio than 1:1:1.

In an implementation, as illustrated in FIGS. 2 and 11 , in themulti-chamber apparatus, the ratio of the number of the high etch ratechambers 130, the number of the rinse chambers 140, and the number ofthe supercritical drying chambers 150 may be, e.g., 3:1:2.

For example, as illustrated in FIGS. 2 and 11 , six high etch ratechambers 130, two rinse chambers 140, and four supercritical dryingchambers 150 may be provided. This is to efficiently reduce the processtime by considering the size limitation of each chamber.

A multi-chamber apparatus according to embodiments will now be describedwith reference to FIGS. 11 and 12 . A repeated description of elementsand features identical to those of the above-described embodiments maybe omitted or given briefly.

FIG. 12 illustrates a side view of a multi-chamber apparatus accordingto embodiments. FIG. 12 is a side layout of a multi-chamber apparatuswhose chambers arranged in plan view as illustrated in FIG. 11 arestacked in the third direction Z.

Referring to FIGS. 11 and 12 , a vertical size of a supercritical dryingchamber 150 may be larger than that of a high etch rate chamber 130 or arinse chamber 140. In view of these limitations, the ratio of the numberof the high etch rate chambers 130, the number of the rinse chambers 140and the number of the supercritical drying chambers 150 may be, e.g.,9:3:4, in the multi-chamber apparatus according to the embodiments.

For example, the high etch rate chambers 130 and the rinse chambers 140may be stacked in three tiers in the third direction Z, and thesupercritical drying chambers 150 may be stacked in two tiers.Accordingly, nine high etch rate chambers 130, three rinse chambers 140,and four supercritical drying chambers 150 may be included in themulti-chamber apparatus.

In an implementation, the number of the high etch rate chambers 130, thenumber of the rinse chambers 140 and the number of the supercriticaldrying chambers 150 may also be 18, 6, and 8, respectively.

In an implementation, the number of the high etch rate chambers 130 maybe increased when the etch rate of the high etch rate chambers 130 isreduced. This may improve the efficiency of a wafer cleaning process,thereby increasing the yield.

A multi-chamber apparatus according to embodiments will now be describedwith reference to FIG. 13 . A repeated description of elements andfeatures identical to those of the above-described embodiments may beomitted or given briefly.

FIG. 13 illustrates a plan view of a multi-chamber apparatus accordingto embodiments.

Referring to FIG. 13 , a driver 170 of the multi-chamber apparatusaccording to the embodiments may include a third robot arm 173.

Both a first robot arm 171 and the third robot arm 173 may move a waferW in a transfer zone 160. The first robot arm 171 may perform a drytransfer, e.g., may move a dry wafer W. For example, the first robot arm171 may move the wafer W from a buffer zone 120 to a high etch ratechamber 130 via the transfer zone 160 and transfer the wafer W from asupercritical drying chamber 150 to the buffer zone 120 via the transferzone 160.

The third robot arm 173 may perform a wet transfer, e.g., may move a wetwafer

W. For example, the third robot arm 173 may move the wafer W from thehigh etch rate chamber 130 to a rinse chamber 140 via the transfer zone160 and move the wafer W from the rinse chamber 140 to the supercriticaldrying chamber 150 via the transfer zone 160.

According to an embodiment, two robot arms may respectively perform adry transfer and a wet transfer, contamination of a wafer W may be morereliably prevented, and the efficiency of wafer movement may besignificantly improved.

One or more embodiments may provide a multi-chamber apparatus capable ofsuccessively performing a wafer cleaning process and a supercriticaldrying process.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

What is claimed is:
 1. A multi-chamber apparatus for processing a wafer,the apparatus comprising: a high etch rate chamber configured to receivethe wafer and to etch silicon nitride with a phosphoric acid solution; arinse chamber configured to receive the wafer and to clean the waferwith an ammonia mixed solution; and a supercritical drying chamberconfigured to dry the wafer with a supercritical fluid, wherein: aprocess time of the high etch rate chamber is a first time, a processtime of the rinse chamber is a second time, a process time of thesupercritical drying chamber is a third time, and a ratio of the firsttime, the second time, and the third time is 5:1:3.
 2. The multi-chamberapparatus as claimed in claim 1, further comprising a first robot armconfigured to sequentially move the wafer to the high etch rate chamber,the rinse chamber, and the supercritical drying chamber.
 3. Themulti-chamber apparatus as claimed in claim 2, further comprising atransfer zone connected to an entrance of each of the high etch ratechamber, the rinse chamber, and the supercritical drying chamber,wherein the first robot arm is located in the transfer zone.
 4. Themulti-chamber apparatus as claimed in claim 3, further comprising abuffer zone connected to the transfer zone and in which the wafer isaccommodatable for a predetermined time period before being moved to thehigh etch rate chamber, the rinse chamber, or the supercritical dryingchamber.
 5. The multi-chamber apparatus as claimed in claim 4, wherein:the first robot arm includes a first holder and a second holder, thefirst holder is to perform a dry transfer, and the second holder is toperform a wet transfer.
 6. The multi-chamber apparatus as claimed inclaim 1, further comprising: a housing that contains the high etch ratechamber, the rinse chamber, and the supercritical drying chamber; anopening and closing portion in the housing and through which the waferis passable; and a load port outside the housing and in which the waferis placeable.
 7. The multi-chamber apparatus as claimed in claim 6,further comprising: a first robot arm configured to move the wafer fromthe load port into the housing; and a second robot arm configured toreceive the wafer from the first robot arm and to sequentially move thewafer to the high etch rate chamber, the rinse chamber, and thesupercritical drying chamber.
 8. The multi-chamber apparatus as claimedin claim 1, wherein the high etch rate chamber is configured to cleanthe wafer with deionized water after the wafer is etched with thephosphoric acid solution.
 9. The multi-chamber apparatus as claimed inclaim 1, wherein the rinse chamber is configured to clean the wafer withisopropyl alcohol after the wafer is cleaned with the ammonia mixedsolution.
 10. The multi-chamber apparatus as claimed in claim 1, whereinthe ammonia mixed solution contains NH₄OH, H₂O₂, and H₂O.
 11. Amulti-chamber apparatus for processing a wafer, the apparatuscomprising: at least one high etch rate chamber configured to receivethe wafer and to etch silicon nitride with a chemical at a firsttemperature; at least one rinse chamber configured to receive the waferand to clean the wafer with a chemical at a second temperature that islower than the first temperature; at least one supercritical dryingchamber configured to dry the wafer with a supercritical fluid; ahousing in which the at least one high etch rate chamber, the at leastone rinse chamber, and the at least one supercritical drying chamber arelocated; and a robot arm in the housing and configured to move the waferto the at least one high etch rate chamber, the at least one rinsechamber, and the at least one supercritical drying chamber, wherein: aprocess time of the high etch rate chamber is a first time, a processtime of the rinse chamber is a second time, a process time of thesupercritical drying chamber is a third time, and a ratio of the firsttime, the second time, and the third time is 5:1:3.
 12. Themulti-chamber apparatus as claimed in claim 11, wherein the firsttemperature is 150° C. to 300° C.
 13. The multi-chamber apparatus asclaimed in claim 11, wherein the second temperature is 20° C. to 150° C.14. The multi-chamber apparatus as claimed in claim 11, wherein a numberof the at least one high etch rate chamber included in the multi-chamberapparatus is n, a number of the at least one rinse chambers included inthe multi-chamber apparatus is m, a number of the at least onesupercritical drying chamber included in the multi-chamber apparatus isi, n, m, and i are natural numbers, n is greater than i, and i isgreater than m.
 15. The multi-chamber apparatus as claimed in claim 14,wherein: n is 3, m is 1, and i is 2, or n is 9, m is 3, and i is
 4. 16.A multi-chamber apparatus for processing a wafer, the apparatuscomprising: at least one first chamber; at least one second chamber; atleast one third chamber; a transfer zone outside the at least one firstchamber, the at least one second chamber, and the at least one thirdchamber; a buffer zone outside the at least one first chamber, the atleast one second chamber, and the at least one third chamber andconnected to the transfer zone; and a driver configured to move thewafer, wherein: the driver is configured to: move the wafer from thebuffer zone to the at least one first chamber, move the wafer to the atleast one second chamber via the transfer zone after an etching processis performed on the wafer using a phosphoric acid solution in the atleast one first chamber, move the wafer to the at least one thirdchamber via the transfer zone after a cleaning process is performed onthe wafer using an ammonia mixed solution in the at least one secondchamber, and move the wafer to the buffer zone after a supercriticaldrying process is performed on the wafer in the at least one thirdchamber, a process time of the first chamber is a first time, a processtime of the second chamber is a second time, a process time of the thirdchamber is a third time, and a ratio of the first time, the second time,and the third time is 5:1:3.
 17. The multi-chamber apparatus as claimedin claim 16, wherein: each of the at least one first chamber, the atleast one second chamber, and the at least one third chamber areprovided in plural numbers, and the driver is configured to move thewafer to empty the plurality of first chambers, the plurality of secondchambers, and the plurality of third chambers.
 18. The multi-chamberapparatus as claimed in claim 16, wherein the driver includes: a firstholder configured to move the wafer from the at least one first chamberto the at least one second chamber and to move the wafer from the atleast one second chamber to the at least one third chamber; a secondholder configured to move the wafer from the buffer zone to the at leastone first chamber; and a third holder configured to move the wafer fromthe at least one third chamber to the buffer zone.
 19. The multi-chamberapparatus as claimed in claim 18, wherein: the first holder isconfigured to move the wafer in a wet state, and the second holder andthe third holder are configured to move the wafer in a dry state.
 20. Amulti-chamber apparatus for processing a wafer, the apparatuscomprising: at least one high etch rate chamber configured to receivethe wafer and to etch silicon nitride with a chemical at a firsttemperature; at least one rinse chamber configured to receive the waferand to clean the wafer with a chemical at a second temperature that islower than the first temperature; at least one supercritical dryingchamber configured to dry the wafer with a supercritical fluid; ahousing in which the at least one high etch rate chamber, the at leastone rinse chamber, and the at least one supercritical drying chamber arelocated; and a robot arm in the housing and configured to move the waferto the at least one high etch rate chamber, the at least one rinsechamber, and the at least one supercritical drying chamber, wherein: aprocess time of the at least one high etch rate chamber is a first time,a process time of the at least one rinse chamber is a second time, aprocess time of the at least one supercritical drying chamber is a thirdtime, and a ratio of the first time, the second time, and the third timeis 5:1:3.
 21. The multi-chamber apparatus as claimed in claim 20,wherein the first temperature is 150° C. to 300° C.
 22. Themulti-chamber apparatus as claimed in claim 20, wherein the secondtemperature is 20° C. to 150° C.
 23. The multi-chamber apparatus asclaimed in claim 20, wherein a number of the at least one high etch ratechamber included in the multi-chamber apparatus is n, a number of the atleast one rinse chambers included in the multi-chamber apparatus is m, anumber of the at least one supercritical drying chamber included in themulti-chamber apparatus is i, n, m, and i are natural numbers, n isgreater than i, and i is greater than m.
 24. The multi-chamber apparatusas claimed in claim 23, wherein n is 3, m is 1, and i is
 2. 25. Themulti-chamber apparatus as claimed in claim 23, wherein n is 9, m is 3,and i is
 4. 26. A multi-chamber apparatus for processing a wafer, theapparatus comprising: at least one first chamber; at least one secondchamber; at least one third chamber; a transfer zone outside the atleast one first chamber, the at least one second chamber, and the atleast one third chamber; a buffer zone outside the at least one firstchamber, the at least one second chamber, and the at least one thirdchamber and connected to the transfer zone; and a driver configured tomove the wafer, wherein the driver is configured to: move the wafer fromthe buffer zone to the at least one first chamber, move the wafer to theat least one second chamber via the transfer zone after an etchingprocess is performed on the wafer using a phosphoric acid solution inthe at least one first chamber during a first time, move the wafer tothe at least one third chamber via the transfer zone after a cleaningprocess is performed on the wafer using an ammonia mixed solution in theat least one second chamber during a second time, and move the wafer tothe buffer zone after a supercritical drying process is performed on thewafer in the at least one third chamber during a third time, wherein aratio of the first time, the second time, and the third time is 5:1:3.27. The multi-chamber apparatus as claimed in claim 26, wherein a numberof the at least one first chamber included in the multi-chamberapparatus is n, a number of the at least one second chambers included inthe multi-chamber apparatus is m, a number of the at least one thirdchamber included in the multi-chamber apparatus is i, n, m, and i arenatural numbers, n is greater than i, and i is greater than m.
 28. Themulti-chamber apparatus as claimed in claim 27, wherein n is 3, m is 1,and i is
 2. 29. The multi-chamber apparatus as claimed in claim 27,wherein n is 9, m is 3, and i is
 4. 30. The multi-chamber apparatus asclaimed in claim 26, wherein: each of the at least one first chamber,the at least one second chamber, and the at least one third chamber areprovided in plural numbers, and the driver is configured to move thewafer to empty the plurality of first chambers, the plurality of secondchambers, and the plurality of third chambers.
 31. The multi-chamberapparatus as claimed in claim 26, wherein the driver includes: a firstholder configured to move the wafer from the at least one first chamberto the at least one second chamber and to move the wafer from the atleast one second chamber to the at least one third chamber; a secondholder configured to move the wafer from the buffer zone to the at leastone first chamber; and a third holder configured to move the wafer fromthe at least one third chamber to the buffer zone.
 32. The multi-chamberapparatus as claimed in claim 31, wherein: the first holder isconfigured to move the wafer in a wet state, and the second holder andthe third holder are configured to move the wafer in a dry state.